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In this work, an improvement of Schottky junction was performed for application in Back Enhanced BESOI MOSFET. It was observed that the formation of NiSi prior to the deposition of the aluminum on it, protects the Schottky junction from the aluminum interaction with Ni during thermal treatment. As a result, the Schottky junction obtained with this new process fabrication presents a better electrical behavior with ideality factor, n, close to 1 (n = 1.02 for Werner method and n = 0.95 for Gromov method) and Schottky barrier height, Φ b = 0.42 eV. |
