Low drive voltage GaAs quantum well electroabsorption modulators obtained with a displaced junction
| Autor: | A. C. Crook, T. A. DeTemple, David V. Forbes, Timothy M. Cockerill, C. M. Herzinger, James J. Coleman |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
Equivalent series resistance business.industry Heterojunction Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Semiconductor laser theory law.invention Optical modulator Optics law Optoelectronics Breakdown voltage Quantum well laser Electrical and Electronic Engineering business Low voltage Quantum well |
| Zdroj: | IEEE Photonics Technology Letters. 6:619-622 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/68.285559 |
| Popis: | A reduction in the drive voltage of an electroabsorption waveguide modulator based on an AlGaAs/GaAs quantum well laser heterostructure is demonstrated by a simple change in the position of the p-n junction relative to the quantum well. This is accomplished by adjusting the doping profile and does not significantly alter the operation of the structure as a laser or degrade other aspects of device performance such as reverse breakdown voltage and series resistance. A contrast ratio of 25 dB (5 dB/100 /spl mu/m) was obtained with a bias change of -2 V. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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