Yellow luminescence and related deep levels in unintentionally doped GaN films

Autor:	Leeor Kronik, Ilan Shalish, Yossi Rosenwaks, U. Tisch, Yoram Shapira, G. Segal, Joseph Salzman
Rok vydání:	1999
Předmět:	Photoluminescence Materials science business.industry Surface photovoltage Doping Optoelectronics Electron business Spectroscopy Luminescence Molecular physics Acceptor Thermal energy
Zdroj:	Physical Review B. 59:9748-9751
ISSN:	1095-3795 0163-1829
Popis:	The deep level energy distribution associated with the well-known ‘‘yellow luminescence’’ in GaN is studied by means of two complementary deep level techniques: photoluminescence and surface photovoltage spectroscopy. The combined experimental results show that the yellow luminescence is due to capture of conduction band electrons, or electrons from shallow donors ~with a maximum depth on the order of the thermal energy! by a deep acceptor level with a broad energy distribution, centered at ;2.2 eV below the conduction band edge. In addition, the results show that the density of yellow luminescence related states possesses a significant surface component. @S0163-1829~99!16215-5#
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7ea670cd0f4cc525aaee67404b51784b https://doi.org/10.1103/physrevb.59.9748 Zobrazit plný text záznamu