Steep retrograde indium channel profiling for high-performance nMOSFETs device fabrication

Autor:	James Yong Meng Lee, Ying Keung Leung, Lap Chan, Eng Fong Chor, W. S. Li, Alex See, Shiang Yang Ong
Rok vydání:	2000
Předmět:	Materials science Fabrication business.industry Reverse short-channel effect Doping chemistry.chemical_element Short-channel effect Ion implantation chemistry MOSFET Electronic engineering Optoelectronics business Indium Communication channel
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.405423
Popis:	Integration issues involved in incorporating Indium channel implant in nMOSFET device fabrication are studied using TSUPREM4 and MEDICI simulations. This allows a correlation between the channel doping profile and the electrical results. Techniques are aimed at achieving a Steep Retrograde Channel Profile for effective Short Channel Effects and Reverse Short Channel Effects control. One such technique is the inclusion of a Rapid Thermal Anneal step after NLDD implant. Alternative techniques such as Boron pocket removal and NLDD dose reduction are also studied.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7ea30d88e4d60af184b831690eb4e330 https://doi.org/10.1117/12.405423 Zobrazit plný text záznamu