Fabrication and temperature-dependent band gap shrinkage of α-phase Bi2O3thin films grown by atomic layer deposition method
| Autor: | Zhihua Duan, Junhao Chu, Yude Shen, Kai Jiang, Jinzhong Zhang, Yawei Li, Zhigao Hu |
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| Rok vydání: | 2013 |
| Předmět: |
Diffraction
Materials science Band gap Analytical chemistry Nanotechnology Atmospheric temperature range Condensed Matter Physics Electronic Optical and Magnetic Materials Atomic layer deposition Transmission electron microscopy Deposition (phase transition) Thin film Fourier transform infrared spectroscopy Instrumentation |
| Zdroj: | The European Physical Journal Applied Physics. 62:20303 |
| ISSN: | 1286-0050 1286-0042 |
| DOI: | 10.1051/epjap/2012130133 |
| Popis: | α-Bi 2 O 3 thin films were deposited on different substrates by atomic layer deposition method. The results of X-ray diffraction, high-resolution transmission electron microscopy and X-ray photoelectron spectroscope correspond to α-Bi 2 O 3 . The Fourier transform infrared spectroscopy analyses indicate that the reaction is rather complete during the deposition. Optical properties of the films have been investigated using ultraviolet-infrared transmittance spectra in the temperature range of 8–300 K. It is found that the band gap E g decreases from 3.12 to 3.03 eV with the temperature. The parameters α B and Θ B of the Bose-Einstein model are 69.3 meV and 293.9 K, respectively. The band narrowing coefficient d E g /d T is −0.435 meV/K at room temperature. The present results can be considerable for future application of Bi 2 O 3 -based electro-optic and wide temperature range optoelectronic devices. |
| Databáze: | OpenAIRE |
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