0.5- mu m 3.3-V BiCMOS standard cells with 32-kilobyte cache and ten-port register file

Autor: F. Sano, Hiroshi Momose, Takayasu Sakurai, K. Matsuda, Yohji Watanabe, Tetsu Nagamatsu, Y. Niitsu, Katsuhiro Seta, A. Chiba, Hiroyuki Miyakawa, Hiroyuki Hara
Rok vydání: 1992
Předmět:
Zdroj: IEEE Journal of Solid-State Circuits. 27:1579-1584
ISSN: 0018-9200
DOI: 10.1109/4.165339
Popis: BiCMOS standard cell macros, including a 0.5-W 3-ns register file, a 0.6-W 5-ns 32-kbyte cache, a 0.2-W 3-ns table look-aside buffer (TLB), and a 0.1-W 3-ns adder, are designed with a 0.5- mu m BiCMOS technology. A supply voltage of 3.3 V is used to achieve low power consumption. Several BiCMOS/CMOS circuits, such as a self-aligned threshold inverter (SATI) sense amplifier and an ECL HIT logic are used to realize high-speed operation at the low supply voltage. The performance of the BiCMOS macros is verified using a fabricated test chip. >
Databáze: OpenAIRE