| Autor: |
C.D. Presti, Paul Theilmann, Peter M. Asbeck, Dylan Kelly |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
2010 IEEE Radio Frequency Integrated Circuits Symposium. |
| DOI: |
10.1109/rfic.2010.5477409 |
| Popis: |
A UHF RFID rectifier which turns on at near zero input voltage is demonstrated. The rectifier is fabricated in 0.25-µm silicon-on-sapphire (SOS) CMOS technology using intrinsic, near zero threshold devices. A novel improved cross-coupled bridge topology is used to minimize the leakage incurred through the use of intrinsic devices while maintaining their low power turn on characteristics. The fabricated rectifier demonstrates a peak power conversion efficiency (PCE) of 71.5% at 915MHz with a RF input of −4 dBm and a 30 kΩ load. More importantly, a PCE ≫ 30% was measured for all RF input powers between −28 and −4 dBm demonstrating state-of-the-art efficiency across a wide range of input powers. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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