| Autor: |
Yunchen Qiu, R. Acklin, Xiao-Hong Du, K. Remack, Anand Seshadri, John Y. Fong, D. Liu, W.F. Kraus, J. Roscher, Terence G. W. Blake, Scott R. Summerfelt, S. Natarajan, Sudhir K. Madan, J. Eliason, Ning Qian, J. Rodriguez, Theodore S. Moise, Hugh P. McAdams |
| Rok vydání: |
2004 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of Solid-State Circuits. 39:667-677 |
| ISSN: |
0018-9200 |
| DOI: |
10.1109/jssc.2004.825241 |
| Popis: |
A low-voltage (1.3 V) 64-Mb ferroelectric random access memory (FRAM) using a one-transistor one-capacitor (1T1C) cell has been fabricated using a state-of-the-art 130-nm transistor and a five-level Cu/flouro-silicate glass (FSG) interconnect process. Only two additional masks are required for integration of the ferroelectric module into a single-gate-oxide low-voltage logic process. Novel overwrite sense amplifier and programmable ferroelectric reference generation schemes are employed for fast reliable read-write cycle operation. Address access time for the memory is less than 30 ns while consuming less than 0.8 mW/MHz at 1.37 V. An embedded FRAM (eFRAM) density of 1.13 Mb/mm/sup 2/ is achieved with a cell size of 0.54 /spl mu/m/sup 2/ and capacitor size of 0.25 /spl mu/m/sup 2/. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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