Current–voltage and low-frequency noise analysis of heterojunction diodes with various passivation layers
| Autor: | Ho-Jin Yun, Jin-Un An, Yu-Mi Kim, Ga-Won Lee, Seung-Dong Yang, Hi-Deok Lee, Jin-Sup Kim, Young-Uk Ko, Kwang-Seok Jeong, Seong-Hyeon Kim |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Passivation business.industry Metals and Alloys Thermionic emission 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology 01 natural sciences Noise (electronics) Poole–Frenkel effect Surfaces Coatings and Films Electronic Optical and Magnetic Materials Reverse leakage current 0103 physical sciences Materials Chemistry Optoelectronics Crystalline silicon Diffusion current 0210 nano-technology business Diode |
| Zdroj: | Thin Solid Films. 598:109-114 |
| ISSN: | 0040-6090 |
| Popis: | Low-frequency noise (1/f noise) has been analyzed to characterize the amorphous/crystalline silicon heterojunction diodes with passivation layer of a-Si:H (p–i–n), Al2O3 (p–Al2O3–n), and ZnO (p–ZnO–n) and without passivation (p–n). Four types of diodes show high ideality factors and the dependence of the reverse leakage current on the electric field shows that the diodes commonly follow the Poole–Frenkel model, which is field-assisted thermionic emission from the traps in the materials. However, the conduction mechanism in the reverse bias can be more easily clarified from the bias dependence of the 1/f noise. That is, the p–i–n and p–n diodes are affected by the diffusion current mechanism, and the p–Al2O3–n and p–ZnO–n diodes with an inferior interface are affected by the generation–recombination current mechanism. This indicates that the p–i–n and p–n diodes have a better interface quality than the p–Al2O3–n and the p–ZnO–n. These results show that the 1/f noise measurement can be a useful and more sensitive method to estimate the interface quality of heterojunction diodes. |
| Databáze: | OpenAIRE |
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