Production-Compatible Regeneration of Boron-Doped Czochralski-Silicon in a Combined Fast-Firing and Regeneration Belt-Line Furnace
| Autor: | Walter, D.C., Steckenreiter, V., Helmich, L., Pernau, T., Schmidt, J. |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20172017-2co.9.4 |
| Popis: | 33rd European Photovoltaic Solar Energy Conference and Exhibition; 377-381 Boron-doped Czochralski-grown silicon (Cz-Si), as used in the industrial production of solar cells today, is suffering from a light-induced degradation (LID) of the carrier lifetime during illumination. It has been known since a decade that under lab conditions, this degradation can be permanently cured by illumination at increased temperature, which has been known as ‘regeneration’ treatment. In this contribution, we examine the permanent regeneration of the carrier lifetime in standard boron-doped Cz-Si using an industrial combined fast-firing and regeneration furnace - the c.FIRE REG of centrotherm photovoltaics. Our study reveals that for an optimized firing and regeneration process, very high implied open-circuit voltages Voc.impl exceeding 740 mV are achieved on standard 1-2 cm p-type Cz-Si wafers. These very high measured Voc.impl values clearly indicate the suitability of the process for highly efficient PERC cell production. Additionally, as the c.FIRE REG furnace is realized in a belt-line configuration, which exposes each wafer for less than 70 s to the firing and regeneration conditions, our experiments clearly demonstrate the excellent suitability of the examined tool for the implementation into industrial solar cell production lines. We also demonstrate the successful application to industrial PERC solar cells produced by two different manufacturers. |
| Databáze: | OpenAIRE |
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