Near‐ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S⋅9H2O regrowth

Autor:	T. H. Hollenbeck, R. Bhat, C. J. Sandroff, D. A. Humphrey, R. N. Nottenburg
Rok vydání:	1988
Předmět:	Electron mobility Materials science Physics and Astronomy (miscellaneous) Passivation business.industry Transistor Bipolar junction transistor Heterojunction law.invention law Optoelectronics Thin film business Current density Common emitter
Zdroj:	Applied Physics Letters. 52:218-220
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.99524
Popis:	The deposition of sodium sulfide nonahydrate (Na2S⋅9H2O) onto mesa AlGaAs/GaAs heterostructure bipolar transistors confers near‐ideal transport characteristics to the device structure. By reducing the GaAs surface recombination velocity, sulfide regrowth leads to current gain ( β) almost independent of collector current, and β>1 at collector current density below 5×10−7 A/cm−2. Furthermore, we obtain by passivation an emitter junction ideality factor of n=1.03.
Databáze:	OpenAIRE
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