Self-rectifying resistive switching phenomena observed in Ti/ZrN/Pt/p-Si structures for crossbar array memory applications
| Autor: | Hee-Dong Kim, Dongjoo Bae, Sungho Kim, Jinsu Jung |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) business.industry Reading (computer) 02 engineering and technology 021001 nanoscience & nanotechnology Crossbar array 01 natural sciences Resistive random-access memory Memory cell Resistive switching 0103 physical sciences Optoelectronics 0210 nano-technology business Low voltage |
| Zdroj: | Applied Physics Letters. 118:112106 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/5.0036528 |
| Popis: | In this Letter, the self-rectifying resistive switching (RS) behavior is demonstrated in Ti/ZrN/Pt/p-Si resistive random access memory (RRAM) devices. Compared to an RS characteristic of the conventional Ti/ZrN/Pt structures, the memory cell with a p-Si bottom layer shows a larger current ratio. However, a current-limited region is also more clearly obtained in a low voltage region, which can result in one diode-type RRAM with self-selecting properties. Consequently, these results infer that the proposed ZrN-based RRAM cells with a Pt/p-Si selector warrant the realization of the self-selecting RRAM cell without any additional peripheral elements to suppress a disturbance in the reading operation. |
| Databáze: | OpenAIRE |
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