| Popis: |
In this paper, we have analyzed the DC & RF performance of a Pseudomorphic high electron mobility transistor (PHEMT) with an Al 0.22 Ga 0.78 As supply layer, In 0.18 Ga 0.82 As channel layer built on a p-type GaAs. Output characteristics curve (I d -I DS ), transfer characteristics curve (I D -V GS ), transconductance (from the I D -V GS plot), subthreshold slope, unity current gain cut off frequency (f T ) and maximum oscillation frequency (f max ) of the device are obtained. The simulated structure shows an improved transconductance of 522 mS/mm, threshold voltage V t = −1.1 V at V DS = 6 V, peak current (Id) of about 600 mA/mm at V GS = − 0.4 V. The proposed device achieves f T = 3.16 GHz and f max = 31.6 GHz. All simulations are performed using Silvaco ATLASTM. |
