Plasma deposition of geo2/sio2 and si3n4 waveguides for integrated optics

Autor:	E. M. Starr, N. Nourshargh, J. S. McCormack
Rok vydání:	1986
Předmět:	Optics Materials science Planar Fabrication business.industry Attenuation Doping General Engineering Deposition (phase transition) Integrated optics Plasma Chemical vapor deposition business
Zdroj:	IEE Proceedings J Optoelectronics. 133:264
ISSN:	0267-3932
DOI:	10.1049/ip-j.1986.0043
Popis:	A plasma activated chemical vapour deposition (CVD) technique is described for fabricating doped silica optical waveguides on silica substrates. Planar, germania-doped, silica waveguides have been fabricated with less than 0.3 dB/cm attenuation at λ = 0.633 μ/m. The deposition technique has also been used for fabricating GeO 2 and Si 3 N 4 waveguides.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7e2afa87bf1376391f9647963f59887d https://doi.org/10.1049/ip-j.1986.0043 Zobrazit plný text záznamu