Photosensitivity spectra of a gallium arsenide heterojunction with amorphous arsenic trisulfide
| Autor: | I. P. Arzhanukhina, K. P. Kornev, Yu. V. Seleznev |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Materials science
business.industry Chalcogenide General Physics and Astronomy Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Disordered Systems and Neural Networks Spectral line Gallium arsenide Amorphous solid Condensed Matter::Materials Science chemistry.chemical_compound Semiconductor Photosensitivity chemistry Arsenic trisulfide Optoelectronics business |
| Zdroj: | Russian Physics Journal. 42:1-6 |
| ISSN: | 1573-9228 1064-8887 |
| DOI: | 10.1007/bf02508237 |
| Popis: | We present a study of the photoresponse spectrum of heterojunctions ofn-GaAs with amorphous As2S3 films with various thicknesses of the glassy chalcogenide semiconducting film. We obtain an expression to calculate the fraction of the light absorbed in the glassy semiconductor, the fraction of the light absorbed in GaAs, taking into account the multiple reflections at the interfaces in the structure under study, and also their ratio. We present an analysis of the absorption of light in the structure. The calculated results show good agreement with experiment. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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