PbS/PbSSe/PbSnSe heterostructure lasers with a quantum-well active region
| Autor: | Yu. G. Selivanov, A P Shotov |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Materials science
business.industry Band gap Heterojunction Condensed Matter Physics Epitaxy Laser Electronic Optical and Magnetic Materials law.invention Semiconductor Operating temperature Quantum dot laser law Materials Chemistry Optoelectronics Electrical and Electronic Engineering Atomic physics business Quantum well |
| Zdroj: | Semiconductor Science and Technology. 5:S27-S29 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/5/3s/007 |
| Popis: | Semiconductor single-quantum-well double-heterostructure lasers with a Pb0.95Sn0.05Se active region from Lz=400 to 2000 AA were fabricated by hot wall molecular epitaxy. For Lz 1000 AA the laser emission corresponds to the energy gap of the material in the active region. The lowest threshold current (230 A cm-3 at 77 K) and the highest operating temperature (218 K) were obtained for the laser with Lz=2000 AA. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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