Nanoscale Non-Destructive Semiconductor Dopant Characterization and Failure Analysis
| Autor: | Hassan Tanbakuchi |
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| Rok vydání: | 2010 |
| Předmět: | |
| Zdroj: | ECS Transactions. 27:151-156 |
| ISSN: | 1938-6737 1938-5862 |
| DOI: | 10.1149/1.3360611 |
| Popis: | The non-destructive semiconductor dopant characterization and failure analysis has been an important and elusive measurement challenge to date. We have employed the vector network analyzer (VNA) as the measurement engine to address the nano scale electronic characterization challenge. The VNA architecture as it exists today has the ability to measure impedances close to the analyzer's own characteristic impedance (i.e., 50 ohms) with good precision up to 100GHz stimulus frequency. However, the measurement precision and resolution provided by a VNA drop by two orders of magnitude as impedance deviates from 50 ohms. We propose a solution that remedies the lack of measurement precision and resolution for large and small impedances when measured by a VNA. Agilent has developed a new scanning microwave microscope (SMM) mode that utilizes a half-wavelength resonator in conjunction with a diplexer connected to a VNA to perform very sensitive capacitance measurements at the tip of a conductive atomic force microscope (AFM). These measurements are achieved via transformation of the high impedance (i.e., the very small capacitance between the AFM tip/sample to the ground) to 50 ohms (i.e., the measurement system's characteristic impedance) using a half-wavelength resonator and diplexer. We also designed a Dopant Profile Measurement Module as a measurement accessory to the SMM system. This module in conjunction with the VNA /SMM enables the non-destructive semiconductor dopant characterization and failure analysis. |
| Databáze: | OpenAIRE |
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