Laser Annealing Improves the Photoelectrochemical Activity of Ultrathin MoSe2 Photoelectrodes
| Autor: | Muhammad Tahir, Hua Chen, Merranda Schmid, Zach N. Nilsson, Justin B. Sambur, Li Wang |
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| Rok vydání: | 2019 |
| Předmět: |
Photocurrent
Materials science Band gap business.industry Doping chemistry.chemical_element 02 engineering and technology Photoelectrochemical cell 010402 general chemistry 021001 nanoscience & nanotechnology Tin oxide 01 natural sciences 0104 chemical sciences chemistry Iodide oxidation Optoelectronics General Materials Science Thin film 0210 nano-technology business Indium |
| Zdroj: | ACS Applied Materials & Interfaces. 11:19207-19217 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.9b04785 |
| Popis: | Understanding light-matter interactions in transition-metal dichalcogenides (TMDs) is critical for optoelectronic device applications. Several studies have shown that high intensity light irradiation can tune the optical and physical properties of pristine TMDs. The enhancement in optoelectronic properties has been attributed to a so-called laser annealing effect that heals chalcogen vacancies. However, it is unknown whether laser annealing improves functional properties such as photocatalytic activity. Here, we show that high intensity supra band gap illumination improves the photoelectrochemical activity of MoSe2 nanosheets for iodide oxidation in indium doped tin oxide/MoSe2/I–, I3–/Pt liquid junction solar cells. Ensemble-level photoelectrochemical measurements show that, on average, illuminating MoSe2 thin films with 1 W/cm2 532 nm excitation increases the photoelectrochemical current by 142% and shifts the photocurrent response to more favorable (negative) potentials. Scanning photoelectrochemical m... |
| Databáze: | OpenAIRE |
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