Growth of InP/InGaAs multiple quantum well structures by chemical beam epitaxy

Autor:	M.A.Z. Rejman-Greene, M.H. Lyons, S.J. Amin, P.J. Skevington, Graham J. Davies, M. A. G. Halliwell
Rok vydání:	1992
Předmět:	Inorganic Chemistry Wavelength Materials science business.industry Multiple quantum Materials Chemistry Optoelectronics Growth control Wafer Condensed Matter Physics business Chemical beam epitaxy Lattice mismatch
Zdroj:	Journal of Crystal Growth. 120:328-332
ISSN:	0022-0248
DOI:	10.1016/0022-0248(92)90412-c
Popis:	InP/InGaAs multiple quantum well structures with up to 200 periods have been grown by CBE. These structures exhibit exceptional lateral uniformity, measured as ±1 A in period, ±13 ppm in lattice mismatch and ±0.5 nm in wavelength across a 2 inch wafer. Good surface morphology, sharp interfaces and excellent growth control have all been demonstrated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7df232d4c8dc4286c945bb758d528e8e https://doi.org/10.1016/0022-0248(92)90412-c Zobrazit plný text záznamu