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We report the structural and electrical characteristics of hafnium oxide (HfO 2 ) gate dielectrics treated by remote NH 3 plasma under various radio-frequency (RF) powers at a low temperature. Significant increase of effective dielectric constant ( k eff ), decrease of capacitance equivalent thickness (CET), reduction in leakage current density, and suppression of the interfacial layer thickness were observed with the increase of the RF power in the remote NH 3 plasma treatment. The effects of hydrogen passivation and depassivation on the HfO 2 /Si interface due to the remote NH 3 plasma treatment were also observed by the variation of photoluminescence (PL) intensity, indicating that the PL measurement is applicable to probe the interfacial properties. An ultrathin interfacial layer (∼0.3 nm), a high k eff , (20.9), a low leakage current density (9 × 10 −6 A/cm 2 ), and a low CET (1.9 nm) in the nitrided HfO 2 film were achieved, demonstrating that the nitridation process using remote NH 3 plasma under a high RF power at a low temperature is a promising way to improve in electrical properties of high-K gate dielectrics. |
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