Conduction Properties of SiN Films Depositing by RF Magnetron Sputtering

Autor:	Jian Jun Yang, Zai Yu Zhang, Yan Hui Wu
Rok vydání:	2014
Předmět:	Materials science business.industry Sputtering Electrical resistivity and conductivity Optoelectronics General Medicine Substrate (electronics) Sputter deposition business Thermal conduction Deposition (law) Deposition temperature
Zdroj:	Applied Mechanics and Materials. :1658-1661
ISSN:	1662-7482
DOI:	10.4028/www.scientific.net/amm.568-570.1658
Popis:	In the work, the resistivity of the SiN film was discussed, the resistivity of the SiN film was influenced by the deposition parameters, such as the sputtering power, deposition temperature, N2 pressure and ratio of N2/(N2+Ar). Only considering the resistivity of the SiN film, the optimal parameters of the film were as below, the sputtering power was 50W, the substrate temperature was 400°C, N2 pressure was 1Pa, and the ratio of N2/(N2+Ar) was 2.5%.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7de30b885cfd0e77a5e101046d9059f8 https://doi.org/10.4028/www.scientific.net/amm.568-570.1658 Zobrazit plný text záznamu