Reoxidation of silicon nitride studied using x-ray photoelectron spectroscopy and transmission electron microscopy

Autor:	Sudhama C. Shastri, Keith Kamekona, Guy Averett, Brian Schoonover, Will Z. Cai, Dorai Iyer, Damien Gilmore, Rebecca Burgin
Rok vydání:	2004
Předmět:	Materials science Analytical chemistry General Physics and Astronomy chemistry.chemical_element Substrate (electronics) Nitride Oxygen chemistry.chemical_compound Silicon nitride chemistry X-ray photoelectron spectroscopy Transmission electron microscopy Oxidizing agent Hydrogen chloride
Zdroj:	Journal of Applied Physics. 95:367-372
ISSN:	1089-7550 0021-8979
Popis:	The chemical composition of oxynitride films obtained by furnace oxidation of silicon nitride (Si3N4) in a dry or wet oxygen ambient at a substrate temperature of 900–1000 °C is characterized using x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy. The dependence of the oxidation kinetics on the initial nitride thickness dnit is also investigated in the range of 18–500 A. In the case of dnit=500 A, only the surface of the nitride is oxidized after a 13 min 900 °C oxidation in a wet ambient. In contrast, for dnit=18 and 40 A, under the same conditions condition, the underlying Si substrate is oxidized in addition to Si3N4. Furthermore, it is found that the oxidation rate of 500 A Si3N4 increases by approximately 14%–21% when 2% hydrogen chloride (HCl) is added to the oxidizing ambient. Increases in HCl content beyond 2% do not result in any further enhancement of the oxidation of the nitride film.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7ddd12e16a8b7b4bd3bcc13f0e21a794 https://doi.org/10.1063/1.1631068 Zobrazit plný text záznamu