Point defects as result of surface deformation on a GaAs wafer

Autor:	S. Eichler, U. Männig, Torsten E.M. Staab, C. Zamponi, R. Hammer, Karin Maier
Rok vydání:	2003
Předmět:	Microprobe Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Scanning electron microscope Diamond Microbeam engineering.material Crystallographic defect Condensed Matter::Materials Science Crystallography Positron engineering Wafer Ductility
Zdroj:	Applied Physics Letters. 83:4128-4130
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1625786
Popis:	Scratches on the surface of an undoped semi-insulating GaAs wafer have been produced by a wedge-shaped single diamond grain. The subsurface damage has been analyzed by a positron microprobe. This instrument provides laterally resolved positron annihilation measurements, which are sensitive to lattice defects like vacancies and dislocations. We can clearly identify different regions of damage which have been characterized both by conventional scanning electron microscopy and the positron microbeam. The latter reveals indications of plastic deformation due to the trace of created defects observed. We discuss the possible implications of the observed ductile behavior of GaAs usually known to be brittle at room temperature and under atmospheric pressure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7dd46a5cf022b8f5158881b22ecaa531 https://doi.org/10.1063/1.1625786 Zobrazit plný text záznamu