Self-rolled-up InGaAs/GaAs microtubes fabricated directly on Si (100) substrates

Autor: Xia Zhang, Yifan Wang, Yongqing Huang, Xiaoyi Li, Yunxia Gao, Bochang Li, Zhihong Pan, Qi Wang, Xiaomin Ren, Eryang Wang, Zhigang Jia
Rok vydání: 2014
Předmět:
Zdroj: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32:030603
ISSN: 2166-2754
2166-2746
DOI: 10.1116/1.4869557
Popis: The authors have fabricated the high-performance smooth-walled InGaAs/GaAs microtubes directly on Si (100) substrates. All the strained In0.2Ga0.8As (15 nm)/GaAs (35 nm) bilayers metamorphically grown on Si have rolled up into microtubes from the long-side of rectangular patterns. The average diameter of Si-based microtubes is ∼4.2 μm, which is slightly bigger than that of their GaAs-based counterparts. Scanning electron microscopy and atomic force microscopy measurements show that the structural properties of the Si-based InGaAs/GaAs microtubes have been quite good and nearly consistent with the GaAs-based counterparts except for very slight surface undulation.
Databáze: OpenAIRE