Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates
| Autor: | Chulho Song, Satoshi Hiroi, Yoshihiro Irokawa, Toshihide Nabatame, Okkyun Seo, Yanfang Lou, Kentaro Kajiwara, Loku Singgappulige Rosantha Kumara, Natalia Palina, Yasuo Koide, Kentaro Uesugi, Osami Sakata, Yanna Chen, Masato Hoshino |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Diffraction Materials science business.industry 02 engineering and technology General Chemistry Substrate (electronics) 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Crystal Crystallinity 0103 physical sciences Sapphire Optoelectronics General Materials Science Wafer Thin film 0210 nano-technology business |
| Zdroj: | CrystEngComm. 20:2861-2867 |
| ISSN: | 1466-8033 |
| DOI: | 10.1039/c8ce00229k |
| Popis: | The crystallinity of one n-GaN (Si-doped) and two p-GaN (Mg-doped) homoepitaxial thin films selectively grown on GaN substrates was evaluated by using synchrotron X-ray diffraction. A reflection-mode monochromatic X-ray topography image from the n-GaN homoepitaxial thin film shows a mesh-shape structure that is similar to that of the selective-growth GaN substrate. Moreover, transmission-mode white-beam X-ray topography images from the GaN substrate and the n-GaN homoepitaxial thin film show similar regular dot-shape diffraction patterns. This suggests that, following hydride vapor phase epitaxy, the structural characteristics of the selectively grown GaN substrates inherited from their corresponding foreign substrates (dot-patterned sapphire) were inherited by the subsequent n-GaN homoepitaxial thin film, although the crystal quality of the homoepitaxial thin film had been deteriorated. White-beam topography images from two p-GaN homoepitaxial thin films grown on the same GaN substrate wafer and cut from adjacent areas indicate that the p-GaN thin films were non-uniform. |
| Databáze: | OpenAIRE |
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