| Autor: |
Aaron Thean, Taiji Noda, Ajay Kumar Kambham, Wilfried Vandervorst, Christa Vrancken, Naoto Horiguchi |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
2013 IEEE International Electron Devices Meeting. |
| DOI: |
10.1109/iedm.2013.6724570 |
| Popis: |
An analysis of dopant diffusion and defects in 3D Fin structure using an atomistic lattice kinetic Monte Carlo (KMC) approach are shown. Atomistic KMC simulations are compared with 3D methodology of Atom Probe Tomography (APT). Atomistic dopant distribution in 3D Fin structure is shown. KMC simulation shows that implant temperature has an impact on amorphization and residual defects and dopant-defect complexes are formed at top-of-Fin and edge-of-Fin-side after SPER. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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