Si‐implanted and disordered stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers
| Autor: | R. D. Burnham, Louis J. Guido, Kathleen Meehan, V. K. Eu, Nick Holonyak, P. Gavrilovic, Milton Feng |
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| Rok vydání: | 1985 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Silicon business.industry Inorganic chemistry Doping chemistry.chemical_element Heterojunction Semiconductor device Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser law.invention Semiconductor laser theory Condensed Matter::Materials Science Ion implantation chemistry law Condensed Matter::Superconductivity Optoelectronics Condensed Matter::Strongly Correlated Electrons business Quantum well |
| Zdroj: | Applied Physics Letters. 47:903-905 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.95973 |
| Popis: | The Si impurity is implanted into an Al x Ga1−x As‐GaAs quantum wellheterostructure to form, by impurity‐induced layer disordering and donor doping, a stripe‐geometry buried heterostructure laser. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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