Characterization of InP grown by LEC using glassy carbon, silica and PBN crucibles

Autor:	C.A.C. Mendonça, C.E.M. de Oliveira, Maria Izabel M. S. Bueno, M.M.G. de Carvalho, C.R. Miskys, G.M. Guadalupi, M. Battagliarin
Rok vydání:	1998
Předmět:	Photoluminescence Dopant Chemistry Analytical chemistry Crucible Mineralogy Glassy carbon Condensed Matter Physics Acceptor Inorganic Chemistry Impurity Hall effect Electrical resistivity and conductivity Materials Chemistry
Zdroj:	Journal of Crystal Growth. 186:487-493
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(97)00815-4
Popis:	Undoped InP single crystals were grown by liquid-encapsulated Czochralski method (LEC) using glassy carbon, silica and PBN crucibles. The samples were characterized by Hall and resistivity measurements, photoluminescence at 2 K and glow discharge mass spectroscopy. The residual impurity concentrations for InP grown using glassy carbon or silica crucible are of the same order of magnitude but both higher than that for InP grown with PBN crucibles. All samples exhibit good optical quality. The main acceptor impurities detected in all samples were C and Zn, while the main donors were S and Si. The InP grown from the glassy carbon crucible has the lowest C concentration and the main dopant detected in this sample was S originating from the crucible.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7dc1f7599a85f859dee985c8232581f5 https://doi.org/10.1016/s0022-0248(97)00815-4 Zobrazit plný text záznamu Full Text from ScienceDirect