Etching Characteristics and Mechanism of SiNx Films for Nano-Devices in CH2F2/O2/Ar Inductively Coupled Plasma: Effect of O2 Mixing Ratio
| Autor: | Sun Jin Yun, Kwang-ho Kwonl, Alexander Efremov, Geun Young Yeom, Jinyoung Son |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Plasma parameters Biomedical Engineering Analytical chemistry Bioengineering General Chemistry Plasma Condensed Matter Physics Volumetric flow rate symbols.namesake X-ray photoelectron spectroscopy Etching (microfabrication) symbols Langmuir probe General Materials Science Thin film Inductively coupled plasma |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 14:9534-9540 |
| ISSN: | 1533-4899 1533-4880 |
| Popis: | Etching characteristics and mechanisms of low-temperature SiN(x) thin films for nano-devices in CH2F2/O2/Ar inductively-coupled plasmas were studied. The etching rates of SiN(x) thin films as well as the etching selectivities over Si and photoresist were measured in the range of 25-75% O2 in a feed gas at fixed CH2F2 content (25%), gas pressure (6 mTorr), input power (900 W), bias power (200 W), and total gas flow rate (40 sccm). Plasma parameters were analyzed using the Langmuir probe diagnostics and optical emission spectroscopy. The chemical states of the etched surfaces were examined by the X-ray photoelectron spectroscopy. It was found that the non-monotonic (with a maximum at about 50-60% O2) SiN(x) etching rate does not correlate with monotonically decreasing F atom flux and ion energy flux. It was proposed that, under the given set of experimental conditions, the SiN(x) etching process is also controlled by the O and H atom fluxes through the destruction of the fluorocarbon polymer layer. |
| Databáze: | OpenAIRE |
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