HfO2/RuO2 Interface Mediated Oxygen Balance in Memristor: An Ab Initio Study
| Autor: | Kan-Hao Xue, Xiangshui Miao, Yun-Lai Zhu, Li Heng Li, Jun-Hui Yuan, Xiaomin Cheng |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Interface (Java) Interface model Schottky barrier Ab initio 02 engineering and technology Memristor 021001 nanoscience & nanotechnology 01 natural sciences Oxygen balance law.invention Transition metal Chemical physics law 0103 physical sciences Theoretical methods 0210 nano-technology |
| Zdroj: | 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). |
| DOI: | 10.1109/edtm50988.2021.9420968 |
| Popis: | In this paper, the microscopic mechanisms of the transition metal oxides/RuO 2 memristor showing great performance in the recent advances were presented using ab initio theoretical methods. The calculations of oxygen vacancy formation, the Schottky barrier height, and the migration barriers for the HfO 2 /RuO 2 interface model suggest that there is mediated oxygen balance at the interface which contributes to the improvement of the device. |
| Databáze: | OpenAIRE |
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