Demonstration of an InAsBi photodiode operating in the MWIR

Autor:	Faebian Bastiman, Robert D. Richards, Chee Hing Tan, Ben White, Ian C. Sandall, John P. R. David
Rok vydání:	2014
Předmět:	Materials science Band gap business.industry chemistry.chemical_element Spectral response Bismuth Photodiode law.invention Wavelength Optics chemistry law Optoelectronics business Dark current Diode
Zdroj:	Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III.
ISSN:	0277-786X
Popis:	An InAsBi photodiode has been grown, fabricated and characterized to evaluate its performance in the MWIR region of the spectrum. Spectral response from the diode has been obtained up to a diode temperature of 225 K. At this temperature the diode has a cut off wavelength of 3.95 μm, compared to 3.41 μm in a reference InAs diode, indicating that Bismuth has been successfully incorporated to reduce the band gap of InAs by 75 meV. Similar band gap reduction was deduced from the cut off wavelength comparison at 77 K. From the dark current data, R0A values of 590 MΩcm2 and 70 MΩcm2 at temperatures of 77 and 290 K respectively, were obtained in our InAsBi photodiode.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7db445715356d6e783c5cab7bf61a7bb https://doi.org/10.1117/12.2069697 Zobrazit plný text záznamu