Synthesis of AlOx thin films by atmospheric-pressure mist chemical vapor deposition for surface passivation and electrical insulator layers

Autor:	Hajime Shirai, Yasuhiko Fujii, Karim Md Enamul, Shunji Kurosu, Ryo Ishikawa, Masahide Tokuda, Tatsuro Hanajiri, Keiji Ueno, Tomofumi Ukai, Arifuzzaman Rajib
Rok vydání:	2020
Předmět:	Fabrication Materials science Atmospheric pressure Passivation Surfaces and Interfaces Chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films Solvent chemistry.chemical_compound chemistry Chemical engineering Molecule Methanol Thin film
Zdroj:	Journal of Vacuum Science & Technology A. 38:033413
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.5143273
Popis:	Aluminum oxide (AlOx) thin films were grown using aluminum acetylacetonate [Al(acac)3] as a source material with methanol and water as the solvent by mist chemical vapor deposition, while also exposing some films to water or methanol mists after fabrication. The incorporation of –OH groups into the AlOx network that is fabricated from Al(acac)3 and using solely methanol as a solvent generates both malformed Al(OH) network and nonuniformity. However, the addition of a small amount of water in the solvent during film growth decreases the deposition rate due to the hydrogen bond in water molecules but markedly removes –OH groups from the growth surface of the AlOx network and improves the surface uniformity. The AlOx thin films grown with a methanol:water ratio of 7:3 at 400 °C exhibit a recombination velocity of 16 cm/s, a breakdown field of 6.9 MV/cm, and an interface trap density of 4.2 × 1010 cm−2 eV−1, which are compatible with the AlOx grown by the other vacuum-based methods.
Databáze:	OpenAIRE
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