Photoluminescence as a probe of the interaction of intense far-infrared radiation with semiconductor quantum structures
| Autor: | Mark S. Sherwin, Dieter Bimberg, S. J. Allen, John Cerne, M. Sundaram, P.C. van Son, I.-H. Tan |
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| Rok vydání: | 1994 |
| Předmět: |
Physics
Nuclear and High Energy Physics Photoluminescence Condensed Matter::Other business.industry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser law.invention Semiconductor Far infrared law Quantum dot laser Electro-absorption modulator Optoelectronics business Instrumentation Quantum Quantum well |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 341:174-177 |
| ISSN: | 0168-9002 |
| DOI: | 10.1016/0168-9002(94)90342-5 |
| Popis: | At the UCSB free-electron laser we have realized a set-up to detect the photoluminescence from semiconductor quantum structures while they are irradiated with intense far-infrared radiation. The effect of the radiation on both quantum wells and quantum-well wires has been identified with non-resonant carrier heating. The confined carriers in these structures have energy-level spacings in the far-infrared region of the spectrum. The tunability of the free-electron laser therefore allows the study of resonant effects as well. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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