Effect of voltages on γ−Ray linear attenuation coefficients for some semiconductors
| Autor: | Bekir Gürbulak, Salih Erzeneoğlu, Burcu Akça |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
Radiation
Materials science 010308 nuclear & particles physics business.industry Attenuation Detector Analytical chemistry Cleavage (crystal) 01 natural sciences 030218 nuclear medicine & medical imaging 03 medical and health sciences 0302 clinical medicine Semiconductor Attenuation coefficient 0103 physical sciences Transmission method Fluorescence spectrometer business Voltage |
| Zdroj: | Radiation Physics and Chemistry. 179:109208 |
| ISSN: | 0969-806X |
| DOI: | 10.1016/j.radphyschem.2020.109208 |
| Popis: | In this work, the change according to the different voltages (0, 5, 10, 15, 20 and, 25 V) of γ − ray linear attenuation coefficients for GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and GaTe0.8Se0.2 semiconductors have been measured by using an extremely narrow collimated-beam transmission method in the energy 59.54 keV. Gamma-rays of 241Am were detected by using a high-resolution Si(Li) detector and, energy dispersive X-ray fluorescence spectrometer (EDXRFS). GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and GaTe0.8Se0.2 semiconductors were grown by the Bridgman-Stockbarger method. There are no cracks or voids on the surface of ingots. Samples were cleaved along the cleavage planes (001). The freshly cleaved crystals have mirror-like surfaces even before using mechanical treatment. Results are presented and discussed in this study. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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