Investigation of defect clusters in ion-irradiated Ni and NiCo using diffuse X-ray scattering and electron microscopy
| Autor: | Raina J. Olsen, Hongbin Bei, Lumin M. Wang, Eliot D. Specht, Ke Jin, Laurent Karim Béland, Bennett C. Larson, Chenyang Lu |
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| Rok vydání: | 2016 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Scattering 020502 materials 02 engineering and technology 021001 nanoscience & nanotechnology Molecular physics Crystallographic defect Crystallography 0205 materials engineering Nuclear Energy and Engineering Transmission electron microscopy Vacancy defect X-ray crystallography Cluster (physics) General Materials Science Dislocation 0210 nano-technology Stacking fault |
| Zdroj: | Journal of Nuclear Materials. 469:153-161 |
| ISSN: | 0022-3115 |
| DOI: | 10.1016/j.jnucmat.2015.11.030 |
| Popis: | The nature of defect clusters in Ni and Ni 50 Co 50 (NiCo) irradiated at room temperature with 2–16 MeV Ni ions is studied using asymptotic diffuse X-ray scattering and transmission electron microscopy (TEM). Analysis of the scattering data provides separate size distributions for vacancy and interstitial type defect clusters, showing that both types of defect clusters have smaller sizes and higher densities in NiCo than in Ni. Diffuse scattering results show good quantitative agreement with TEM size distributions for cluster sizes greater than 2 nm in diameter, but we find that TEM under represents the number of defect clusters ≤ 2 nm, which comprise the majority of vacancy clusters in NiCo. Interstitial dislocation loops and stacking fault tetrahedra are identified by TEM. Comparison of diffuse scattering lineshapes to those calculated for dislocation loops and SFTs indicates that most of the vacancy clusters are SFTs. |
| Databáze: | OpenAIRE |
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