Review of Plasma-Based Etch Treatment in Dielectric Etch Processes
Autor: | Jun-Qing Zhou, Hai-Yang Zhang, Min-Da Hu, Wang Xinpeng, Qiuhua Han |
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Rok vydání: | 2013 |
Předmět: | |
Zdroj: | ECS Transactions. 52:349-355 |
ISSN: | 1938-6737 1938-5862 |
DOI: | 10.1149/05201.0349ecst |
Popis: | This work mainly focuses on the post-etch treatment (PET) in dielectric etch processes from contact etch, trench etch to all-in-one etch. PET step is optimized not only to efficiently remove the byproducts formed on the sidewall/bottom of contact/via hole during etch proceses but also to eliminate the surface corrosion of the etched metal comprising feature. Besides, we also leveraged PET to repair low-k damage and prevent the formation of mositure on film surface by modifing film from hydrophilic to hydrophobic, especially for low-k/ultra low-k dielectric processes. Results show the actual effect of PET in terms of reliability performance highly relies on the specific etch recipe, wet clean condition and substrate material in back end of line (BEOL). We also addressed the pre-etch treatment to effectively reduce the impact of photo-resist scumming in contact etch. In brief, plasma-based etch treatment is imperative to extend the tightened process window margin. |
Databáze: | OpenAIRE |
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