A Multilevel FeFET Memory Device based on Laminated HSO and HZO Ferroelectric Layers for High-Density Storage
| Autor: | David Lehninger, Matthias Rudolph, P. Steinke, Malte Czernohorsky, Tarek Ali, Konrad Seidel, Johannes Müller, R. Hoffmann, Franz Muller, U. Muhle, B. Patzold, Thomas Kampfe, Kati Kühnel, K. Zimmermann, P. Polakowski, R. Olivo, Maximilian Lederer |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
0303 health sciences Materials science business.industry Gate stack Lamination (topology) High density storage 01 natural sciences Ferroelectricity Switching time 03 medical and health sciences 0103 physical sciences Memory window Optoelectronics business 030304 developmental biology |
| Zdroj: | 2019 IEEE International Electron Devices Meeting (IEDM). |
| Popis: | We report 1-3 bit/cell FeFET operation through optimized HSO and HZO ferroelectric laminate layers using alumina interlayers. Memory window up to 3.5V, switching speed of 300ns, 10 years retention, and 104 endurance are reported. The gate stack lamination merits are discussed with insight potential of FeFET as an MLC memory. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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