Planar indium-diffused lead telluride detector arrays

Autor:	B.J. Waldock, C.H. Gooch, M.G. Astles, H.A. Tarry, R.C. Bottomley
Rok vydání:	1978
Předmět:	Materials science business.industry Detector Photodetector chemistry.chemical_element Carrier lifetime Particle detector Photodiode law.invention Lead telluride chemistry.chemical_compound Responsivity Optics chemistry law Optoelectronics Electrical and Electronic Engineering business Indium
Zdroj:	Electronics Letters. 14:209
ISSN:	0013-5194
DOI:	10.1049/el:19780141
Popis:	Lead telluride detector arrays have been made by diffusing indium into arsenic-doped p-type lead telluride. Planar devices have a resistance-area product R0A ? 10 ? cm2 at 180 K and a black body detectivity (D* 500 K) ? 6×109 cm Hz? W?1 a typical array showing a responsivity variation of ±20%. The temperature variation of R0A is consistent with an abrupt junction model with an Auger-limited lifetime.
Databáze:	OpenAIRE
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