| Autor: |
Y. Nakata, N. Matsuo, T. Yabu, S. Matsumoto, Hisashi Ogawa, S. Okada, M. Sasago, K. Hashimoto |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
International Electron Devices Meeting 1991 [Technical Digest]. |
| Popis: |
An advanced three-dimensionally (3-D) stacked capacitor cell, SVC, was developed. The SVC shows good electrical characteristics, and it realized a capacitance of 43 fF with a cell area of 1.8 mu m/sup 2/. The uniform formation of the capacitor-dielectric-film (oxide-nitride-oxide film: ONO) on the experimental storage electrode indicates the uniform deposition of the ONO film on all kinds of 3-D storage electrodes including that of the SVC. The SVC is the most promising cell structure for beyond 64 Mbit DRAMs (dynamic RAMs). > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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