The Role of Nucleation Surfaces in the Texture Development of Magnesium Oxide During Ion Beam Assisted Deposition
| Autor: | Raymond F. DePaula, Bruce M. Clemens, Liliana Stan, J. R. Groves, Robert Hammond, Vladimir Matias |
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| Rok vydání: | 2011 |
| Předmět: |
Atomic layer deposition
Reflection high-energy electron diffraction Materials science Ion beam Physical vapor deposition Analytical chemistry Texture (crystalline) Electrical and Electronic Engineering Thin film Condensed Matter Physics Ion beam-assisted deposition Electron beam physical vapor deposition Electronic Optical and Magnetic Materials |
| Zdroj: | IEEE Transactions on Applied Superconductivity. 21:2904-2907 |
| ISSN: | 1558-2515 1051-8223 |
| Popis: | Both the structure and the type of the nucleation surface play a key role in texture development of IBAD MgO films. We have examined these features in Al2O3 and Y2O3 thin films using two different types of deposition methods, atomic layer deposition (ALD) and electron beam evaporation (EBE). Examination of EBE Al2O3 with in situ reflected high-energy electron diffraction (RHEED) films reveals the presence of a nanocrystalline structure that remains unchanged after and is insensitive to ion irradiation with 750 eV argon ions. In contrast, ALD Al2O3 examined with the same method reveals a featureless image that appears amorphous. Use of the ALD Al2O3 film can result in well-textured films with reasonable in-plane mosaic spread values (~ 14°) without process optimization. Similar results were obtained on ALD and EBE Y2O3 films, although, the EBE Y2O3 appeared amorphous in the RHEED even before exposure to the ion beam. The ALD Y2O3 film resulted in an in-plane texture of ~ 10°. Finally, bare silicon substrates were examined. It was found that even with the native oxide remaining on its surface, the silicon underneath was amorphized by the ion beam and provided a suitable surface for the deposition of biaxial textured MgO with an in-plane texture of ~ 7° FWHM. |
| Databáze: | OpenAIRE |
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