Utilizing Raman Spectroscopy for Stress Imaging in MEMS Devices

Autor:	LaVern A. Starman, M. Ahmer, William D. Cowan, J. Reber, J.D. Busbee, John F. Maguire
Rok vydání:	2000
Předmět:	Microelectromechanical systems Materials science Silicon chemistry.chemical_element Mechanical engineering Residual Stress imaging symbols.namesake Induced stress chemistry Residual stress symbols Electronic engineering Raman spectroscopy Beam (structure)
Zdroj:	IFAC Proceedings Volumes. 33:119-122
ISSN:	1474-6670
DOI:	10.1016/s1474-6670(17)36820-9
Popis:	MEMS devices are becoming a pervasive part of today’s technology world. Currently, MEMS designers have to take residual stresses into account when designing microdevices. A more ideal state would be for the developer to design to function and to control the residual stresses to fit within designed parameters. For this to occur, methods of mapping residual stresses must be found and used. In this paper, micro-Raman spectroscopy is used to map both residual and induced stress in beam structures on silicon MEMS device.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7d6c5e20c05683588228a0486c849a83 https://doi.org/10.1016/s1474-6670(17)36820-9 Zobrazit plný text záznamu