Metastable solvent epitaxy of SiC

Autor:	Shigeto R. Nishitani, Tadaaki Kaneko
Rok vydání:	2008
Předmět:	Materials science Silicon chemistry.chemical_element Mineralogy Crystal growth Condensed Matter Physics Epitaxy Inorganic Chemistry chemistry.chemical_compound chemistry Chemical engineering Metastability Materials Chemistry Silicon carbide Allotropy Wafer Phase diagram
Zdroj:	Journal of Crystal Growth. 310:1815-1818
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2007.11.234
Popis:	Silicon carbide (SiC) is a promising material for next-generation high-power devices, but the high cost of forming wafers is causing a bottleneck in the replacement of Si with SiC. We report a new solution growth process that exhibits potential for the growth of SiC for industrial applications. The driving force of this new process is the chemical potential difference between 3C– and 4H–SiC polytypes and is explained using a stable and metastable double-phase diagram.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7d6bb90b07078e7c291635ac460347a7 https://doi.org/10.1016/j.jcrysgro.2007.11.234 Zobrazit plný text záznamu Full Text from ScienceDirect