Amorphous indium–gallium–zinc oxide thin-film transistors instability and stress evaluation by Stretched-Exponential model
| Autor: | Guan-Yu Lin, Kai-Chung Cheng, Hsiung-Hsing Lu, Chia-Yu Chen, Shou-Wei Fang, He-Ting Tsai, Yu-Hsin Lin, Yu-Hung Chen, Tsung-Hsiang Shih, Chih-Yuan Lin, Chin-Wei Yang, Hsin-Hung Li, Lung-Pao Hsin, Chien-Tao Chen, Chun-Ming Yang, Jen-Yu Lee |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
technology industry and agriculture chemistry.chemical_element respiratory system Condensed Matter Physics Electronic Optical and Magnetic Materials Amorphous solid Titanium oxide Threshold voltage chemistry Molybdenum Thin-film transistor Electrode Materials Chemistry Electrical and Electronic Engineering Composite material Layer (electronics) Titanium |
| Zdroj: | Solid-State Electronics. 73:74-77 |
| ISSN: | 0038-1101 |
| Popis: | We have successfully fabricated large sized amorphous indium–gallium–zinc-oxide based active-matrix liquid-crystal displays, which uses Molybdenum/Aluminum/Titanium as source/drain electrode. In this study, an oxygen-rich etch stop layer acts as the oxygen atom supplier and converts the titanium layer into titanium oxide layer, which is found to induce instability of the device. Sample without titanium oxide has an initial threshold voltage shift is less than ±0.1 V after the repeatedly measuring over a period of two weeks. In addition, the IGZO based device demonstrated superior transfer characteristic. This paper established that the stability of the amorphous indium–gallium–zinc-oxide based active-matrix liquid-crystal display can be predicted by Stretched-Exponential model. |
| Databáze: | OpenAIRE |
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