On the possibility to grow zinc oxide-based transparent conducting oxide films by hot-wire chemical vapor deposition
| Autor: | V. Kubilius, T. Murauskas, Z. Saltyte, Adulfas Abrutis, Laimis Silimavicus, Valentina Plausinaitiene, Sabina Kuprenaite |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Inorganic chemistry Oxide chemistry.chemical_element Surfaces and Interfaces Zinc Chemical vapor deposition Substrate (electronics) Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound chemistry Electrical resistivity and conductivity Sapphire Optoelectronics Nichrome business Indium |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 32:020602 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.4842695 |
| Popis: | Hot-wire chemical vapor deposition (HW-CVD) was applied to grow zinc oxide (ZnO)-based transparent conducting oxide (TCO) films. Indium (In)-doped ZnO films were deposited using a cold wall pulsed liquid injection CVD system with three nichrome wires installed at a distance of 2 cm from the substrate holder. The wires were heated by an AC current in the range of 0–10 A. Zn and In 2,2,6,6-tetramethyl-3,5-heptanedionates dissolved in 1,2-dimethoxyethane were used as precursors. The hot wires had a marked effect on the growth rates of ZnO, In-doped ZnO, and In2O3 films; at a current of 6–10 A, growth rates were increased by a factor of ≈10–20 compared with those of traditional CVD at the same substrate temperature (400 °C). In-doped ZnO films with thickness of ≈150 nm deposited on sapphire-R grown at a wire current of 9 A exhibited a resistivity of ≈2 × 10−3 Ωcm and transparency of >90% in the visible spectral range. These initial results reveal the potential of HW-CVD for the growth of TCOs. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|