Tungsten thin-film deposition on a silicon wafer: The formation of silicides at W-Si interface
| Autor: | G.M. Mikhailov, L. G. Shabel’nikov, S. Yu. Shapoval, S. V. Plyushcheva |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Annealing (metallurgy) General Chemical Engineering Metallurgy Metals and Alloys chemistry.chemical_element Tungsten hexafluoride Chemical vapor deposition Tungsten Inorganic Chemistry chemistry.chemical_compound chemistry Silicide Materials Chemistry Wafer Thin film Composite material Sheet resistance |
| Zdroj: | Inorganic Materials. 45:140-144 |
| ISSN: | 1608-3172 0020-1685 |
| DOI: | 10.1134/s002016850902006x |
| Popis: | The interphase boundary formed in the process of tungsten thin-film deposition on a silicon wafer is investigated. These films are produced via (1) a CVD technique relying on hydrogen reduction of tungsten hexafluoride, (2) the same technique supplemented with plasmochemical action, and (3) magnetron deposition used for comparison purposes. It is shown that a nanometer tungsten silicide W5Si3 layer is formed at the tungsten-silicon interface only under gas-phase deposition. The effect of annealing on the specimen composition and surface resistance is investigated. It is shown that the formation and growth of a silicide WSi2 layer commences at 700°C for CVD films and at above 750°C for films obtained with plasmochemical deposition; this results in a drastic increase in their electrical resistance. Under optimal conditions, tungsten films of 8 × 10 −6 Ω cm resistivity are produced. |
| Databáze: | OpenAIRE |
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