Postoxidation thermal annealing effects of liquid phase deposited TiO2 on (NH4)2Sx-treated AlGaAs
| Autor: | Tai Lung Lee, Yong Jie Zou, Kuan Wei Lee, Yeong-Her Wang, Chih Chun Hu |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Metals and Alloys Analytical chemistry Liquid phase Surfaces and Interfaces Ammonium sulfide Surfaces Coatings and Films Electronic Optical and Magnetic Materials Root mean square chemistry.chemical_compound chemistry Titanium dioxide Trap density Materials Chemistry Leakage current density Rapid thermal annealing Deposition (law) |
| Zdroj: | Thin Solid Films. 563:40-43 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2014.04.010 |
| Popis: | Liquid phase deposition (LPD) was performed to fabricate titanium dioxide (TiO 2 ) on AlGaAs by using ammonium sulfide pretreatment. In addition, the study investigated how postoxidation rapid thermal annealing (RTA) affected the LPD-TiO 2 on (NH 4 ) 2 S x -treated AlGaAs. The deposition rate of the as-deposited LPD-TiO 2 for the 10 min 5% (NH 4 ) 2 S x -treated AlGaAs was approximately 126 nm/h. Following the 10 min 5% (NH 4 ) 2 S x pretreatment and a postoxidation RTA at 350 °C for 1 min, the root mean square value, leakage current density at 0 MV/cm, interface trap density, and flat-band voltage shift were improved to 6.20, 5.64 × 10 − 8 A/cm 2 , 6.48 × 10 11 cm − 2 eV − 1 , and 1.5 V, respectively. |
| Databáze: | OpenAIRE |
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