Effect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0)

Autor:	Masao Sakuraba, Kazuya Takahashi, Masaki Fujiu, Junichi Murota
Rok vydání:	2004
Předmět:	Materials science Hydride Diffusion Analytical chemistry General Physics and Astronomy Mineralogy chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films chemistry Thermal stability Layer (electronics) Carbon
Zdroj:	Applied Surface Science. 224:206-209
ISSN:	0169-4332
Popis:	Effect of C on the thermal stability of an atomic layer of Si on Ge(1 0 0) was investigated during heat treatment between 500 and 700 °C. Because of the decrease of the Si coverage and the appearance of Ge hydride are observed after heat treatment at 500–700 °C, Si atoms deposited on Ge(1 0 0) tend to diffuse into the Ge layer. It is shown that an atomic layer of C suppresses the Si diffusion into Ge layer and a C containing Si atomic layer on Ge(1 0 0) is stable up to 600 °C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::7d4150b8556b79d151e0e631f5a84801 https://doi.org/10.1016/j.apsusc.2003.08.047 Zobrazit plný text záznamu Full Text from ScienceDirect