Study of Ga 2 S 3 crystals grown from melt and PbCl 2 flux

Autor: Konstantin A. Kokh, Jingguo Huang, Yu. M. Andreev, Ivan N. Lapin, Grigory V. Lanskii, Valerii A Svetlichnyi, J. Panomarev, Z. M. Huang, Bolat Uralbekov, Yanqing Gao
Rok vydání: 2016
Předmět:
Zdroj: Materials Research Bulletin. 84:462-467
ISSN: 0025-5408
Popis: Monoclinic and cubic Ga2S3 crystals were obtained by Bridgman and flux methods. For the first time optical properties are measured in the bulk samples including THz range. The transparency range 0.44–25 μm is recorded. Ga2S3 crystal demonstrated 20 times higher light induced damage threshold compared to GaSe. No phonon absorption peaks are found in the THz range at wavenumbers below 100 cm−1. IR and THz optical, as well as other physical properties render Ga2S3 among the prospective materials for THz applications.
Databáze: OpenAIRE