Two‐dimensional electron gas mobility anomalies (and enhancement) in pseudomorphic AlGaAs/InGaAs/GaAs heterostructures

Autor:	Vincent Mosser, Jean-Louis Robert, Czeslaw Skierbiszewski, Tadeusz Suski, Elzbieta Litwin-Staszewska, F. Kobbi
Rok vydání:	1995
Předmět:	Condensed Matter::Materials Science Electron mobility Materials science Condensed matter physics Impurity Hall effect General Physics and Astronomy Heterojunction Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Fermi gas Quantum well Molecular beam epitaxy
Zdroj:	Journal of Applied Physics. 77:405-407
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.359339
Popis:	Variation of two‐dimensional electron gas mobility with carrier concentration ns has been examined for different modulation‐doped heterostructures of AlGaAs/InGaAs/GaAs. It is demonstrated that, depending on the method, electrons are distributed among remote impurity sites and different values of mobility can be achieved for the same ns and in the same heterostructure. The origin of this finding is associated with the spatial correlations of remote impurity charges which form dipolelike objects consisting positively charged Si donors and negatively charged DX− states of the same donor. The effect of correlations causes enhancement of mobility of the order of tens of percent and can explain the appearance of the maximum on a mobility versus ns dependence.
Databáze:	OpenAIRE
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