I–V anomalies on InAlAs/InGaAs/InP HFETs and deep levels investigations
| Autor: | M.M. Ben Salem, Abdelkader Souifi, S. Bouzgarrou, Gérard Guillot, Na. Sghaier, Adel Kalboussi |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Analytical chemistry Conductance High voltage Condensed Matter Physics Capacitance Mechanics of Materials Saturation current Frequency dispersion Optoelectronics General Materials Science business Saturation (magnetic) Transient spectroscopy |
| Zdroj: | Materials Science and Engineering: B. 121:178-182 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/j.mseb.2005.03.026 |
| Popis: | In this paper, static measurements and defect analysis performed on InAlAs/InGaAs/InP HFETs are presented. I d – V ds – T , I d – V gs – T and I g – V gs – T characteristics show anomalies (leakage current, degradation in saturation current, kink effect, distortions on I d – V d characteristics in saturation region after high voltage application, …). Deep defects analysis performed by means of capacitance transient spectroscopy (C-DLTS) and frequency dispersion of the output conductance ( G ds ( f )) prove the presence of deep defects with activation energies ranging from 0.12 to 0.75 eV. The presence of generation–recombination centers, acting like traps, is confirmed by I g – V gs . The localization and the identification of these defects are presented. Finally, the correlation between the anomalies observed on output characteristics and defects is discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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